Tursunov M., Iliev Kh., Abdiev U., Bobomuratov S. – RESEARCH OF PROPERTIES OF SILICON WITH BINARY COMPLEXES INVOLVING MN AND S ATOMS
RESEARCH OF PROPERTIES OF SILICON WITH BINARY COMPLEXES INVOLVING MN AND S ATOMS
Tursunov M.*
Doctor of Philosophy in physical and mathematical sciences, Termez State University, Termez city, st. Barkamol avlod-43, Uzbekistan
Iliev Kh.
Doctor of Physics and Mathematical science. Professor, Tashkent state technical University, st. Universitet-2, Tashkent, Uzbekistan
Abdiev U.
Doctor of science, Assistant professor, Head of Department, Termez State University, Termez city, st. Barkamol avlod-43, Uzbekistan
Bobomuratov S.
assistant teacher, Termez State University, Termez city, st. Barkamol avlod-43, Uzbekistan
Abstract
The interaction of manganese atoms with atoms of group VI elements (S, Se, Te) in the silicon lattice has been studied. The formation of electrically neutral molecules with ionic-covalent bonds between Mn atoms and group VI elements, which possibly lead to the formation of new binary unit cells Si2BVI++Mn— in the silicon lattice, has been experimentally established. It has been established that in Si <S, Mn> samples, intense complexation occurs at a temperature of T=1065˚C, respectively.
Keywords: single crystal, interactions, electrically neutral molecules, diffusion, complexation, thermal annealing.
